Abstract
We present the first experimental demonstration of a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier. The forward and reverse characteristics of the TMBS devices are studied as a function of various design parameters and compared with those of planar Schottky and planar PiN rectifiers. More than two orders of magnitude improvement in the leakage current has been obtained over a Ni/4H-SiC Schottky rectifier. Dynamic switching measurements on the device indicated negligible reverse recovery current.
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