Abstract
This paper reports on the use of nano-crystalline doped GeSbTe, or nano-GST, to fabricate a cross-point phase change memory with 4F2 cell size and test results obtained for it. We show the characteristics of a poly-Si diode select device with a high on–off ratio and data writing in a 4F2 memory cell array. The advantages of nano-GST over conventional GeSbTe are presented in terms of neighboring disturbance and 4F2 cross-point array formation. The memory cells’ high drivability, low power, and selective write and read performances are demonstrated. The scalability of the diode current density is also presented.
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