Abstract
This paper describes a new preamplifier IC with 0,15-/spl mu/m gate InP-based high electron mobility transistors (HEMTs) for a high-speed fiber optic communication system. The preamplifier consists of a lumped-element transimpedance amplifier (TIA) for the input stage and a highly stabilized distributed amplifier with cascode-configured unit cells for the gain stage. A gain-peaking technique for a distributed amplifier was employed to enhance the bandwidth and gain flatness of the preamplifier. This gain peaking profile compensates for a lack of bandwidth of a TIA. As a result, we achieved a flat transimpedance gain of 52 dB/spl Omega/ and a bandwidth of 49 GHz.
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