Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam

Hiroshi Murata Hiroshi Murata,Toshihiko Kosugi Toshihiko Kosugi,Noyiyo Kobayashi Noyiyo Kobayashi,Yasuyuki Okamura Yasuyuki Okamura,Takatomo Enoki Takatomo Enoki

doi:10.1109/cleo.2006.4628521

Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam

Hiroshi Murata Hiroshi Murata, Toshihiko Kosugi Toshihiko Kosugi + Show 3 more

https://doi.org/10.1109/cleo.2006.4628521

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Publication Date: Jan 1, 2006

Citations: 5

Affiliation: NTT Basic Research Laboratories, Osaka University

#InP-based High-electron Mobility Transistors #High-electron Mobility Transistors + Show 8 more

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Abstract

Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10 GHz were demonstrated.

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