Abstract
A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1/spl times/0.9 mm/sup 2/. At 1 V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output power for a maximum 3% error vector magnitude (EVM) is 16 dBm. The PA survives a VSWR of 50.
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