Abstract

In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 °C to +85 °C without using any calibration method, absolute temperature inaccuracy less than ±0.6 °C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 µm CMOS technology with a total area of 0.0018 mm2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

Highlights

  • The growing regime of Internet of Things (IoT) requires devices with low-power and low-cost for the consumer electronics

  • A wireless sensor node (WSN) is first in the long line of devices since it is the backbone of any IoT-based application [1]

  • The circuit diagram of proposed temperature sensing module is shown in Figure 2 that consists of three sub-blocks, namely resistor-less beta multiplier circuit, CTAT sensor and PTAT sensor

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Summary

Introduction

The growing regime of Internet of Things (IoT) requires devices with low-power and low-cost for the consumer electronics. A wireless sensor node (WSN) is first in the long line of devices since it is the backbone of any IoT-based application [1]. One of the demanding specifications in the design of wireless sensor node is ultra low-power consumption. This is necessary due to the presence of power-hungry transceiver module [2,3]. These sensor nodes are deployed in various applications such as medical, infrastructure and environmental monitoring, where the most common sensing modality is temperature. Various low power temperature sensing modules that are either suitable or have been used in WSN are available. These temperature sensing modules sense the temperature either by using BJT (Bipolar Junction transistor)-based or by using MOSFET

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