Abstract
This brief presents a picowatt CMOS voltage reference with ultra-low supply and wide temperature range. Biased by PMOS leakage current, ultra-low voltage and ultra-low power consumption are achieved. The temperature range is enlarged by using the increased bulk diode leakage current modulation (BDLCM) effect at high temperature. The proposed design is implemented in a standard 0.18- μm CMOS process. The measurement results show that, the proposed circuit can provide an average voltage reference of 118.1 mV with a standard deviation of 1.3 mV. The minimum supply voltage is 250 mV and the line sensitivity (LS) is 0.3 %/V. The average temperature coefficient (TC) is 73.5 ppm/°C with a standard deviation of 11.7 ppm/°C within a temperature range from -40 °C to 140 °C. The power supply ripple rejection (PSRR) at 100 Hz is -65 dB. The power consumption at room temperature is 113 pW and the active area is 0.0009 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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