Abstract
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-chip thermal coupling effect for the collector side of the PP IGBT. Moreover, a verification has been made by comparing the proposed matrix thermal network model and the conventional lumped RC network model provided by the manufacturer. It is concluded that the collector side has lower thermal resistance and dissipates about 88% of the heat generated by the IGBT chips inside the module. Then, a modular-multilevel-converter high-voltage-direct-current (MMC-HVDC)-based type test setup composed of the press-pack IGBT stacks is established and the junction temperature is calculated with the proposed thermal model and verified by temperature measurements.
Highlights
Compared with plastic IGBT modules, press-pack IGBT modules adopt the idea of the flat-packaged structure once applied to the gate turn-off thyristors (GTOs) or integrated gate commutated thyristors (IGCTs) [1], which contain no bonding wires
The path of heat flow from press-pack chip junction to the collector cooling plate is shorter than that from the chip to the emitter cooling plate, which results in the difference of heat release between the two heatsinks pressed at the surface of press-pack IGBT module
IGBTthe module respectively, Pcoup_b is the power lossaswhich is generated thesilicon neighboring chipinb. the Because chips spreads little heat, the thermal coupling effect among the horizontal chips in the collector baseplate share the same baseplate played as collector pad and the silicon oil filling in the IGBT module spreads becomes and the impact ofamong disc spring pins on the thermal couplingbaseplate effect vertically is little heat,the the focus thermal coupling effect the horizontal chips in the collector becomes reasonably neglected
Summary
Compared with plastic IGBT modules, press-pack IGBT modules adopt the idea of the flat-packaged structure once applied to the gate turn-off thyristors (GTOs) or integrated gate commutated thyristors (IGCTs) [1], which contain no bonding wires. The self-heating thermal impedances and thermal coupling impedances are combined together to form a matrix thermal network This approach is employed in plastic IGBT modules loaded with the three-phase two-level DC-AC voltage source converter. An analytical thermal model with the thermal impedance matrix using the Foster network representation is provided in [17] It is applied for the real-time junction temperature estimation of the plastic IGBT modules used in motor drives. To achieve an accurate junction temperature monitoring tool and balanced thermal management, the thermal coupling effect among the paralleled chips and differences of thermal impedance between the junction to the two contact plates should be explored when modeling the temperature swing and heat distribution map of the press-pack.
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