Abstract
In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100μm 2 . The measured -10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.
Highlights
Terahertz (THz) frequency has appealed in various applications ranging from high data rate shorting-rang communication, security imaging, etc. [1]–[4]
Where PAUT and Phorn are the power at the spectrum analysis and the standard horn, Ghorn is the gain of the standard horn antenna, Lossp and Lcable are the insertion losses of the G-S-G probe and coaxial cable
The octagonal shorted annular ring has mainly contributed to improve gain and reduced surface wave based on 130-nm Silicon Germanium (SiGe) BiCMOS
Summary
Terahertz (THz) frequency has appealed in various applications ranging from high data rate shorting-rang communication, security imaging, etc. [1]–[4]. Magnetic conductor (AMC) structure [10] and dielectric resonator antennas (DRAs) [6], [12]–[15] have been reported to overcome losses of surface waves and increase the gain.
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