Abstract

This article describes the design of a 32 Gb/s four-level pulse amplitude modulation (PAM- 4) optical transceiver in a 40 nm CMOS technology. At the transmitter side, the laser driver is composed of an asymmetric waveform equalizer, a 3-tap feed-forward equalizer (FFE), and a novel active-back termination (ABT) circuit. The ABT circuit provides a self-tracking, tunable source impedance to match the characteristic impedance of different laser diodes. At the receiver side, the fully integrated optical receiver consists of a transimpedance amplifier (TIA), a variable gain amplifier (VGA), an automatic threshold tracking circuit (ATC), and a quarter-rate decision feedback equalizer (DFE). By using the adaptive ATC, it reduces the BER induced by the harmonic distortion along the signal path by more than 27X under a THD of −20dB. Both the ATC and DFE are automatically adapted by an on-chip sign-sign LMS (SSLMS) engine. Fabricated in TSMC 40 nm CMOS process, the chip area for the transmitter and receiver are about 0.029 mm2 and 0.23 mm2. The power consumptions are about 146.8 mW and 128.8 mW respectively for the PAM-4 transmitter and receiver.

Highlights

  • A S DRIVEN by the traffic demands of data centers, the Ethernet development has surged to 400 Gb/s, and is expected to evolve to 800 Gb/s in the near future

  • This article describes the design of a 32 Gb/s optical PAM-4 transceiver

  • MEASUREMENT RESULTS A PAM-4 32 Gb/s optical transceiver is implemented in TSMC 40 nm CMOS technology

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Summary

Introduction

A S DRIVEN by the traffic demands of data centers, the Ethernet development has surged to 400 Gb/s, and is expected to evolve to 800 Gb/s in the near future. An automatic threshold tracking circuit is proposed for the PAM-4 demodulator to tackle the nonlinearity of the transmitter and receiver.

Results
Conclusion

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