Abstract
This paper presents a new methodology for the design of low noise amplifiers for ultra wideband applications. Using the unwanted effect of the gate-drain capacitor of transistors on the input impedance to our benefit, the operation of the conventional narrowband LNA is extended to provide a very good input matching from 3 GHz to 10 GHz. Using a triple-resonance circuit as the drain impedance, a relatively flat gain is also achieved over the same operation band. A power gain of 8 dB, with good input and output matching (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> < -14 dB and S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sub> < -14 dB) is achieved over a 3 to 10 GHz band in 0.13 mum CMOS technology
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