Abstract
We investigated the photoluminescence (PL) properties of a GaAs/AlAs asymmetric seven-folded quantum well (ASFQW) superlattices (SLs) with thin separating barriers within the ASFQW period. The linearly blue-shifted PL was proportional to the applied bias voltage. By performing a numerical analysis of the electric-field dependence of subband energies in the ASFQW, we concluded that this PL originated from consecutive Γ-X mixings between spatially long-range-separated Γ-subband states and an X-state in this ASFQW. These results indicate that various phenomena appear in ASFQW-SLs due to the increased degree of freedom of carrier transport paths, but a precise analysis of the electric field dependence of subband resonances is required. Therefore, the integrated study of AMQW-SLs definitely reveals new physical properties and leads to the development of new devices.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call