Abstract
The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON–OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.
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