A 2-Stage S-Band 2W CW GaN MMIC Power Amplifier in an Overmold QFN Package

Abstract

This paper reports a new fully-integrated 2-stage S-band GaN (Gallium Nitride) HEMT (High Electron Mobility Transistors) MMIC (Monolithic Microwave Integrated Circuit) power amplifier (PA) QPA2935 in an overmold QFN (Quad Flat No-Lead) package. The MMIC PA uses Qorvo’s high performance 40 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are 4 mm × 4 mm × 0.8 mm. This PA delivers a typical 34.3 dBm (2.7 W) power, 54.8 % Power added efficiency (PAE) with 19.3 dB power gain under CW condition. It operates from 2.7 to 3.5 GHz.