Abstract
A CMOS-based magnetic field sensor has been designed for the detection of magnetic field vector components that occur parallel to the chip surface. The device employs two vertical Hall plate structures imbedded orthogonally to each other within the substrate. The sensor makes use of standard p+ implants which bound the plate region for the purposes of actively confining majority carriers and to act as an etch-stop layer. This vertical Hall device was fabricated using a standard 3 pm CMOS process provided by a commercial integrated circuit (IC) manufacturer. Furthermore, a mask-less postprocess bulk micromachining step was used to reduce detrimental cross-sensitivity effects.
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