A 240 GHz Receiver with 6 Gb/s Data Rate Based on Plasma Wave Detection in SiGe Technology

Abstract

This paper presents a fully integrated 240 GHz plasma-wave Field Effect Transistor (FET) direct-detector receiver, implemented in 130 nm Silicon Germanium (SiGe) technology (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 210/250 GHz). The receiver chain is formed of an on-chip patch antenna, plasma-wave detector, and a broadband amplifier. The low modulation frequency characterization shows a responsivity of 15 V/W at 240 GHz, with a drain bias current of 2μ A. The responsivity is higher than 10 V/W from 225 GHz to 250 GHz. When measured with modulated signals at a carrier frequency of 240 GHz, the detected signal shows a clear eye diagram at a data rate up to 6 Gb/s with a bit error rate less than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> .