Abstract
**Please read the paper on the following link:** https://1worldcontent.com/ess/9234.pdf **Abstract:** A broadband 3-stage pseudo-differential SiGe power amplifier, fabricated in an experimental 130 nm SiGe BiCMOS technology with ft/fmax of 470/650 GHz, is presented in this paper. Coupled-line matching networks with optimized impedance ratios are used to maximize bandwidth and output power while maintaing flat power gain and group delay for wireless communications applications. The amplifier provides a maximum small-signal power gain of 17.9 dB and a peak Psat/OP1dB of 6.7/5.2dBm, respectively. The measured small-signal and saturated power 3-dB bandwidth cover 59 GHz (239-298~GHz) and 89 GHz (226-315~GHz), respectively. The DC power consumption is about 417 mW, resulting in a power-added-efficiency of 0.92\\%. This power amplifier has the highest absolute small-signal bandwidth and highest output power in the J-Band for a silicon power amplifier without additional power combining. Without the balun at the input and output, the amplifier provides upto 8.1 dBm and a small-signal gain above 20 dB in an integrated differential circuit.
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