Abstract
A 60 GHz power amplifier with 20dB small signal gain is designed and fabricated using standard 1P7M 90nm CMOS process technology. An excellent correlation between the simulation and measurement is demonstrated. The 3-dB bandwidth exceeding 57 to 65 GHz is achieved. This power amplifier delivers +8.2dBm output P1dB with a linear gain of 20dB and a saturated output power of +12.0dBm with maximum PAE of 9.0% at 1.2V operation. When it is operated at 1.5V it achieves 22dB small signal gain, 10.0dBm output P1dB and 12.4dBm saturated output power. This is the highest gain along with high output power and high max PAE CMOS power amplifier operating in the 60 GHz unlicensed band reported till date. A temperature dependent scalable CMOS device model has been developed for the first time, implementing in the design of the power amplifier and the measured output power characteristics of this 60GHz CMOS power amplifier shows very stable operation over the entire temperature range between −10°C and +80°C.
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