A 23–43 GHz LNA with 2.3-dB NF in 0.1µm GaAs pHEMT Process

Abstract

This paper presents an ultra-wideband low noise amplifier (LNA) fabricated in 0.1µm GaAs pHEMT process for 5G communication application. In order to ensure unconditional stability in the wide operation frequency band, source degeneration inductances are adopted. Benefited from input and inner-stage matching networks, source degeneration and wideband design techniques, the LNA achieves a measured noise figure (NF) of 2-2.4 dB, a small signal gain higher than 21 dB, and an input 1 dB compression point (IP-1dB) of -16 dBm to -10 dBm from 23 GHz to 43 GHz. The total power consumption is 118.4 mW, and the chip area is 2.4 × 1.3mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .