Abstract
This study presents a physical-based RF equivalent circuit model for CMOS transistors. To increase the model accuracy and extend the effective frequency band, the interconnection effects between the input–output pad and the gate–drain of the transistor are described by using a second-order distributed parameter transmission line equivalent circuit network. Both the extrinsic and intrinsic parameters in the model are extracted from the multibias scattering parameters. Based on the proposed model, the S-parameters are calculated and compared with the experimental results. The comparison shows that using second-order distributed parameter transmission line model can improve the phase accuracy of the model remarkably. The proposed model achieves a high accuracy up to 220 GHz.
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