Abstract
AbstractA Ku‐band power amplifier MMIC has been developed using 0.25‐μm GaAs pHEMT technology. To achieve small chip size and simple drain‐bias connection, a bus‐bar power combiner is used. Also, balanced‐power amplifier topology is used to obtain good input/output return losses. The small‐signal gain is about 15 dB and the gain variation is less than 1 dB from 12 to 17 GHz. Good input/output return losses are achieved at less than −15 dB due to the balanced topology. P1dB of 32.6 dBm and PAE of 23.5% are achieved at 14 GHz. The effective chip area is 4.2 × 3.2 mm. Because the power amplifier is implemented using the balanced topology with the bus‐bar power combiner, compact size, high output power, and good input/output return losses can be achieved simultaneously. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 342–344, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20297
Published Version
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