A 2 GHz High Isolation DPDT Switch MMIC

Abstract

A double-pole double-throw (DPDT) switch monolithic microwave integrated circuit (MMIC) has been designed to operate from dc to 2 GHz using a commercial 0.18-/spl mu/m GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. The DPDT switch employs four shunt FET blocks to achieve high isolation. The ON gate bias is set to 0.6 V to reduce the insertion loss. The simulated results of the DPDT switch chip show an insertion loss of less than 0.61 dB and isolation of more than 50 dB up to 2 GHz.