Abstract
A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼10× and ∼90× reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼0.004 mm2, consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is <10% of the full range.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have