A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor

Abstract

True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG with a GeTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switching-based TRNG. In addition, the TRNG endurance of 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high–throughput and highly secure solution for edge applications.