Abstract

SiC MOSFET is suitable for high-speed and high-temperature application. However, the research of SiC MOSFET driving and protection circuit is still in its infancy. Design of a 1MHz SiC MOSFET gate driver circuit have been implemented in this paper, which enhances the reliability of parallel-connected SiC MOSFETs in high frequency applications. Improvements have been made for high-speed overcurrent protection circuit. The fault status can be latched and counted for both overcurrent protection and over-voltage and under-voltage protection of MOSFET gate. In addition, dynamic balancing current sharing structure is proposed for high-speed SiC MOSFET in parallel application. Balanced current sharing can be achieved by means of current feedback and switching delay time compensation. The proposed schemes are verified through experimental results.

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