Abstract

We present the development of a low noise amplifier (LNA) module which demonstrates gain >24 dB and noise figure (NF)<5.5 dB at 183 GHz. Our previous results reported NF<8.3 dB [1], This improvement was achieved by inserting a single-ended microwave monolithic integrated circuit (MMIC) LNA utilizing TRW's 0.08 /spl mu/m gate InP MMIC technology. This paper discusses the development of the new MMIC LNA, reviews the previous results and presents the new data that was obtained,.

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