Abstract
This paper presents a low-power, low-voltage, and low-temperature-coefficient (TC) MOSFET-only subthreshold voltage reference circuit based on a standard 0.18-μm n-well CMOS process. The circuit consists of two novel current generators and an I/V conversion circuit with temperature compensation. Under the control of a proposed pMOS-bulk-driven (PBD) temperature compensation circuit, two pMOSFETs operating in a linear region act as resistors with different TCs and can be used for PTAT and CTAT current generation. Owing to the PBD technique and the subthreshold operating method, these two current generators and the I/V conversion circuit can operate at low voltage. The proposed reference circuit is realized with only standard V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> (SVT) MOS devices. The measurement results show that it can operate at a minimum supply voltage of 0.5 V. The line sensitivity is 0.09% for supply voltages between 0.5 and 1.8 V. The PSRR measured at 100 Hz is 51.8 dB. A measurement of 20 samples indicates that the average TC is 35.7 ppm/°C across a temperature range of -40 to 85 °C. The proposed circuit consumes 17.6 nW from a 0.5-V power supply and occupies an active area of 0.0092 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
Highlights
In the future, billions of smart devices with sensing and processing capabilities will be connected to the Internet with the continuous development of Internet of Things (IoT)
This paper presents a novel all-MOSFET voltage references (VRs) generator realized in standard 0.18-μm n-well CMOS
The post-layout simulation shows that the TC of this proposed VR is 26.7 ppm/◦C at a 0.5-V supply voltage
Summary
Billions of smart devices with sensing and processing capabilities will be connected to the Internet with the continuous development of Internet of Things (IoT). Devices with the above-described functions are called IoT nodes and will preferably be energy efficient, miniaturized, have a long life cycle, and be low cost [1]–[3]. In this scenario, low voltage digital-assisted system-on-chips (SoCs) with MOSFETs operating in the subthreshold region are very attractive. Low voltage digital-assisted system-on-chips (SoCs) with MOSFETs operating in the subthreshold region are very attractive These benefit from a low supply voltage, and the power consumption can be reduced for digital circuits. Analog circuits with a lower supply voltage may consume much more power and chip area to achieve competitive noise performance and linearity. More-over, MOS transistors biased in the subthreshold region are more sensitive to variations in the process, voltage, and temperature (PVT) [4]
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