A 134-154 GHz Low-Noise Amplifier Achieving 36.3-dB Maximum Gain with 3.8-dB Minimum Noise Figure for D-Band Imaging System

Abstract

This paper presents a 134-154 GHz low-noise amplifier (LNA) designed in 28-nm bulk CMOS. The optimized transistor layout has been utilized to reduce the noise Figure (NF) and boost the power gain in D-band (110-170 GHz). A 3-coil transformer-based input matching network with $g_{m}-$boosted common-gate topology is adopted to further reduce the NF. The transformer-based magnetically-coupled resonator matching networks are used to improve the gain flatness and enhance the bandwidth. Post-layout simulation results show that the LNA achieves a maximum power gain of 36.3 dB and a minimum NF of 3.8 dB. The −3-dB and −1-dB bandwidth of the proposed LNA are 20 GHz and 15 GHz, respectively. The LNA consumes 25.4- mW dc power with a supply voltage of l V and occupies an area of 0.46×0.74mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .