Abstract
This paper presents a broadband frequency quadrupler (FQ) implemented with a standard 130-nm SiGe BiCMOS process. Two broadband push-push frequency doublers (×2) operate at an input frequency of 32.5–55 GHz and 65–110 GHz, respectively. To properly drive the two doublers with enough input power and bandwidth, two transformer coupled power amplifiers (PAs) have been adopted. The former power amplifier is based on a neutralized capacitor structure and the latter is based on a transformer topology. A nonlinear device model and a systematic methodology to generate maximum power at second harmonic are proposed. By manipulating the device nonlinearity and optimizing the magnetically and capacitively coupled resonator (MCCR) matching networks, optimum conditions for harmonic power generation are provided. The measurement results show that the proposed quadrupler provides a 90-GHz bandwidth with an 80-dB dynamic range and a high energy efficiency η of 3.7% at 210 GHz.
Highlights
Due to the progress of SiGe BiCMOS technologies, the working frequency of semiconductor devices is increasing, 6G sub-THz circuits can be implemented based on these devices
Compared to GaAs and GaN processes, the SiGe BiCMOS technologies are capable for higher integration and lower power consumption, which is crucial for portable devices with compact size
Including the above various blocks based on the SiGe BiCMOS process, they have been widely used in various sub-THz systems, including radar receivers [10], 5G transceiver [11], and high-resolution imaging device [12]
Summary
Due to the progress of SiGe BiCMOS technologies, the working frequency of semiconductor devices is increasing, 6G sub-THz circuits can be implemented based on these devices. The device modeling and circuit analysis are analyzed to realize optimum matching networks and to optimize the second harmonic output power. A power amplifier can generate the desired Nth harmonic multiplied signal with undesired harmonics removed via a filter Another technique is the linear superposition (LS) technique, which adds up the multiple-phase waves to construct the harmonic output. We report the design and measurement results of the wideband FQ circuits with a bandwidth of 90 GHz and a peak output power of 2.5 dBm in a commercial 130-nm SiGe BiCMOS technology. The measurement results show that the proposed quadrupler provides a 90-GHz bandwidth with an 80-dB dynamic range and η of 3.7% at 210 GHz. In Section 2, the adopted 130-nm SiGe BiCMOS technology and device model are briefly discussed.
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