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Abstract
1200V high-power IC for Hybrid Electric Vehicles (HEVs) was developed for the first time. This IC consists of the 30V lower and upper arm ICs fabricated by Silicon On Insulator (SOI) process, 1200V discrete power MOSFETs for level shift circuit, and 30V discrete power MOSFETs for the output stage. The chips were mounted by BGA (Ball Grid Array) technology with Pb free solder balls. With these technologies, the high blocking voltage of 1200V was achieved without a special high-voltage IC process. In addition, the soft and low loss switching was realized by combination of high power output stage and the soft gate circuits, which this power IC can drive an Insulated Gate Bipolar Transistor (IGBT) even for over 100kW class inverter.
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