Abstract
In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with a 2.8-μm backside-illuminated (BSI) pixel with a lateral overflow integration capacitor (LOFIC) architecture is presented. The pixel was capable of a high conversion gain readout with 160 μV/e− for low light signals while a large full-well capacity of 120 ke− was obtained for high light signals. The combination of LOFIC and the BSI technology allowed for high optical performance without degradation caused by extra devices for the LOFIC structure. The sensor realized a 70% peak quantum efficiency with a normal (no anti-reflection coating) cover glass and a 91% angular response at ±20° incident light. This 2.8-μm pixel is potentially capable of higher than 100 dB dynamic range imaging in a pure single exposure operation.
Highlights
High dynamic range (HDR) imaging technology is widely demanded and has been introduced in many applications
By performing the correlated double sampling (CDS), a high gain and low noise signal readout is obtained in the same manner as the 4 T pixel when the signal charge is lower than the charge storage capacity of the PD
While the storage diode locates the right side within the pixel, the deep n-layer keeps the rectangular and symmetric shape in both the horizontal and vertical directions
Summary
High dynamic range (HDR) imaging technology is widely demanded and has been introduced in many applications. By performing the correlated double sampling (CDS), a high gain and low noise signal readout is obtained in the same manner as the 4 T pixel when the signal charge is lower than the charge storage capacity of the PD. In this condition, the readout conversion gain is the same as the 4 T pixel and expressed as q/CFD, where q is the elementary charge. Backside by the CFD Illumination and CS regardless ofPixel the charge storage capacity of the PD Both high-gain and low-gain signals linearthe photoconversion characteristics, that signal linearization is processed.
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