Abstract
This paper presents the design approach, implementation and experimental results of an octave bandwidth 10 W gallium nitride (GaN) power amplifier (PA) for 5G communication. A surface mount, dual-flat-no-lead (DFN) packaged GaN-HEMT device was used to keep the costs as low as possible. Continuous wave (CW) large-signal measurements show a power added efficiency (PAE) of more than 40% from 1.9–4.2 GHz and a flat power gain of 12 dB. An ACLR of 42 dBc was measured for a 5G signal at 34 dBm average output power utilizing a modern pre-distortion technique. Additional thermal measurements were observed to ensure reliable operation of the device for both excitations, CW and modulated signals.
Published Version
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