Abstract
A 1-watt impatt diode amplifier has been developed for short-haul FM radio relay applications in the 6-GHz common-carrier band. The amplifier is used in the new tm-2 system and as part of a retrofit package to upgrade the performance of the existing tm-1 system. Amplification is provided by a single silicon impatt diode which is used in an injection-locked mode. A finned heat sink provides impatt diode cooling by natural air convection within the radio bay. The diode is expected to have a mean life greater than 10 years, and it can be replaced in the field without the use of special tools or equipment. This microwave-integrated amplifier contains the rf samplers and detectors necessary to monitor both input and output rf power levels. The input power monitor also provides an input to a power-supply squelch circuit that removes dc power from the impatt diode if the rf input signal level becomes too low for adequate performance. The influence of the system requirements upon the amplifier design is described, and data on system performance are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
