Abstract
A linearized ultra-wideband (UWB) CMOS low noise amplifier (LNA) is proposed. The linearity is improved by a post distortion technique, employing PMOS as an auxiliary FET to cancel the second- and the third-order nonlinear currents of common-gate LNA. A three-section band-pass Chebyshev filter is presented for wideband input matching. The LNA implemented in a 0.18 μm CMOS technology demonstrates that IIP3 and IIP2 have about 9 and 6.9 dB improvements in broad frequency range, respectively. Power gain of 9.6-12.6 dB and noise figure (NF) of 3.9-5.8 dB are obtained in the frequency range of 1.6-9.7 GHz with a power dissipation of 10.6 mW under a 1.8 V power supply.
Published Version
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