A 0.13-.MU.m CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals

Abstract

A resistive feedback-based ultra-wideband (UWB) CMOS low noise amplifier (LNA) has been proposed. The resistive feedback technique provides wideband input matching with small noise figure (NF) degradation by reducing the Q-factor of the narrow band LNA input. Compared to the previously reported topology, all passive elements like inductor have been fully integrated in this work. In addition, to improve RF performances, all n-well terminals of the triple-well transistors used for the proposed LNA are connected to the supply voltage through a high value of resistor. The proposed UWB amplifier is implemented in 0.13 ㎛ CMOS technology for a 3 ~ 5 ㎓ frequency band. Measurements show a power gain of + 10 ㏈ gain over 6 ㎓, a minimum (maximum) NF of 2.3 ㏈ (3.8 ㏈), better than -8 ㏈ of input matching, and an input IP3 of ?4 ㏈m, while consuming only 7.5 ㎽ from a 1.5 V supply voltage.