A 0.7 V 850 μW CMOS LNA for UHF RFID reader

Abstract

The design of a narrow-band cascoded CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this work the finite gds (= 1/r0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum Fmin noise matching at a very low power drain of 850 μW from a 0.7-V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a power gain (S21) of ≈12 dB, a reverse isolation (S12) of ≈−34 dB, and an input power reflection (S11@866 MHz) of ≈−12 dB. It had a minimum pass-band NF of around 2.2 dB and a 3rd order input referred intercept point (IIP3) of ≈−9.5 dBm. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2780–2782, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25600