Abstract
This article presents the experimental results for a multiple-input operational transconductance amplifier (MI-OTA). To achieve extended linearity under 0.5-V low voltage supply, the circuit employs three linearization techniques: the bulk-driven (BD), the source degeneration, and the input voltage attenuation created by the MI metal-oxide-semiconductor transistor technique (MI-MOST). Although the linearization techniques result in reduced dc gain, the self-cascode transistors are used to boost the gain of the MI-OTA. Furthermore, the MI-MOST simplifies the internal structure of the OTA and may reduce the complexity of the applications. The MI-OTA operates in the subthreshold region and offers tunability by a bias current in the nanoampere range. The circuit is capable to work with 0.5-V supply voltage while consuming 24.77 nW. The circuit was fabricated using the 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> Taiwan Semiconductor Manufacturing Company (TSMC) CMOS technology and it occupies a 0.01153-mm2 silicon area. Intensive simulation and experimental results confirm the benefits and robustness of the design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
