Abstract
In this work a 0.5-23GHz three-stage broadband distributed amplifier designed in a standard 0.18µm RF CMOS process is presented. A Darlington connection is used in the design to further increase the bandwidth of the amplifier. Gate and drain transmission lines use small size circular spiral inductors provided by the process. S-parameter simulation results show 8?1dB small signal gain from 0.5 to 20GHz and a unity-gain bandwidth of 23GHz. Input and output return losses are better than -10dB from 1 to 23GHz and -8dB from 1 to 24GHz respectively. The improved performance of the proposed distributed amplifier is verified by comparison of the S-parameter simulation results with those obtained from a standard common-source three-stage distributed amplifier.
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