Abstract
A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, has been developed. The 0.6-/spl mu/m-wide Si-cap/SiGe-base multilayer was selectively grown by UHV/CVD. The process, except the SEG, is almost completely compatible with well-established bipolar-CMOS technology and the SiGe HBTs were fabricated on a 200-mm wafer line. The SiGe HBTs have demonstrated a peak cutoff frequency of 90 GHz, a peak maximum oscillation frequency of 107 GHz, and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.
Published Version
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