Abstract
AbstractThis letter presents a 0.01–50‐GHz resistive matching power detector implemented in a commercial 0.15‐ GaAs pseudomorphic high electron mobility transistor technology. An analytical expression is derived for the voltage responsivity of the detector as a function of temperature. To compensate for the temperature dependence of the detector, bias diode topology and mesa resistor load are employed. For an input power of −20 dBm at 1 GHz, the maximum variation of the detector output voltage is less than 0.5 dB over the temperature from C to C. The detector's S11 is less than −8 dB, the dynamic range (DR) is 55 dB, and the maximum voltage responsivity is 700 V/W. An on‐chip wideband capacitor with a bent‐strip shape is designed for direct current blocking. The detector can be used for wideband power monitoring and power amplifier control loop for its high DR and temperature stability.
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