Abstract
Open-circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ) of 960 mV on chalcopyrite solar cell was achieved by pure-sulfide Cu(In,Ga)S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> solar cell. Generally, high-performance Cu(In,Ga)S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> needs KCN-etching treatment to remove CuS layer; however, we were able to fabricate it without KCN-etching treatment. Our champion puresulfide Cu(In,Ga)S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cell demonstrated the efficiency of 14.0%. In this paper, the latest results for high-performance pure-sulfide Cu(In,Ga)S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cells will be presented.
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