Abstract

In this study, we introduce the world's first development of a full‐color micro‐LED display utilizing a Simultaneous Transfer and Bonding (SITRAB) process and a novel SITRAB film. Developed micro‐LED display involves R/G/B micro‐LED chips measuring 35 × 20 µm 2, arranged into a display resolution of 32 × 32, with a pixel pitch of 324 µm and a subpixel pitch of 50 µm. The micro‐LED display utilizes a glass substrate and aluminum wiring. A key innovation in our process is the use of indium solder for low‐temperature bonding, significantly enhancing the assembly process's efficiency and reliability. The SITRAB film, a specially developed material by ourselves, removes the surface oxide of indium solders, facilitating effective bonding between the micro‐LEDs and the display electrodes. Post‐curing of this SITRAB film further enhances the shear strength of the micro‐LEDs. An average shear strength of approximately 5.45 gf (about 32 MPa), significantly surpassing the tensile strength of indium. These advancements not only demonstrate the feasibility of the SITRAB process and the new film material in creating high‐quality micro‐LED displays but also significantly boost the reliability of these displays.

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