914 PZTエピタキシャル膜のガラス基板上への転写と誘電特性評価(GS-4,16 薄膜(1),研究発表講演)

Abstract

We have successfully transferred epitaxial single crystal PZT thin films from MgO substrates onto glass substrates by using micro fabrication process. The internal compressive stress of about 200MPa in the epitaxial PZT thin films was released after the transference. The relative dielectric constant of the PZT thin films increased from 239.4 to 332.9 after the transference with a small decrease of polarization. The crystallinity and crystal orientation of the PZT thin films on the glass substrates were the same to those of epitaxial virgin PZT thin films on the MgO substrates. The transfer process is useful for a fabrication of PZT thin film MEMS devices on any substrates.