Abstract
We have successfully transferred epitaxial single crystal PZT thin films from MgO substrates onto glass substrates by using micro fabrication process. The internal compressive stress of about 200MPa in the epitaxial PZT thin films was released after the transference. The relative dielectric constant of the PZT thin films increased from 239.4 to 332.9 after the transference with a small decrease of polarization. The crystallinity and crystal orientation of the PZT thin films on the glass substrates were the same to those of epitaxial virgin PZT thin films on the MgO substrates. The transfer process is useful for a fabrication of PZT thin film MEMS devices on any substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
