Abstract
We report a 900V 4H-SiC depletion mode (DM) VJFET with a specific on-resistance (RDSON,SP) of 1.46mOhm-cm2 at VGS=2.5V, IDS=10A. The RDSON,SP of the DM VJFET, designed for 600V-800V applications, is one of the lowest reported for a VJFET and is an order of magnitude lower compared to best Si Super Junction (SJ) MOSFETs reported in the literature. The turn-on (EON), turn-off (EOFF) and total (ETOTAL) switching energies of the DM-VJFET at VDD=400V, IDS=32.5A are 146uJ, 168uJ and 314uJ respectively. The switching figure of merit RDSON×QG is 3.8Ohm-nC; this is comparable to or better than the reported SJ-MOSFETs.
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