850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures

Chao-Kun Lin Chao-Kun Lin,J Geske,Won-Jin Choi Won-Jin Choi,M.H Macdougal,P.D Dapkus,A.E Bond

doi:10.1109/leosst.1997.619083

850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures

Chao-Kun Lin Chao-Kun Lin, J Geske + Show 4 more

https://doi.org/10.1109/leosst.1997.619083

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Publication Date: Aug 11, 1997

#Vertical Cavity Surface Emitting Lasers #Current Apertures + Show 8 more

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Abstract

Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.

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