Abstract

The total dose effects of 80 MeV C6+ ions on the DC electrical characteristics of Silicon NPN rf power transistors have been studied in the dose range of 100 krad to 100 Mrad. The SRIM simulation was used to understand the energy loss and range of the ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔIB = IBpost - IBpre), dc forward current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics (VCE-IC) were studied systematically before and after irradiation. The significant degradation in base current (IB) and hFE was observed after irradiation. Isochronal annealing study was conducted on the irradiated transistors to analyze the recovery in different electrical parameters. These results were compared with 60C0 gamma irradiation results in the same dose range.

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