Abstract
Extremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only 1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated. DOI: http://dx.doi.org/10.5755/j01.eee.21.5.13324
Highlights
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2]
We describe an avalanche transistor circuit operating in a random pulse mode, which is observed at supply voltages very close to the threshold, V0 Vth
To demonstrate the mechanism behind the observed random pulses in the avalanche transistor circuit, we propose a phenomenological analog model, which is presented in Fig. 6 as an electronic circuit
Summary
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2]. A variety of circuit modifications with a number of applications to switching devices, nanosecond and subnanosecond pulse generators have been developed. The pulse generators, when supplied with voltage V0 noticeably above the threshold voltage Vth of the collector-base junction (V0 > Vth), produce periodic pulses [3] [7]. We describe an avalanche transistor circuit operating in a random pulse mode, which is observed at supply voltages very close to the threshold, V0 Vth
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