8 - Light-emitting field-effect transistors (LET) based on metal halide perovskites

Abstract

Metal halide perovskites, a rapidly growing class of semiconducting materials with extraordinary physical and chemical properties, have proven great potential for next-generation photovoltaic and light-emitting devices. A light-emitting field-effect transistor (or light-emitting transistor, LET) is a unique device concept that combines the switching and amplification abilities of field-effect transistors with the electroluminescence properties of light-emitting diodes. LETs are also an excellent testbed to study charge transport and recombination processes in semiconductors. In this chapter, we review recent advancements of perovskite light-emitting transistors (PeLETs) and some of the strategies used to optimize their performance, namely: (i) reduction of ionic motion and polarization effects; (ii) compensation of AC-field-induced effects; and (iii) improvement of light-emitting materials. Such approaches have been successfully implemented in recent years by the modification of perovskite active layers or the design of different device architectures and electrical biasing conditions. We conclude by discussing open challenges and future directions in PeLET research and applications.