Abstract
Crystal lattice defects in silicon carbide (SiC) have attracted attention for decades, mainly due to their detrimental role in high-power and optoelectronic applications. Most recently, spin-carrying defects in this technologically mature wide band gap semi-conductor were considered as very interesting for quantum applications, being in many aspects similar to nitrogen vacancy centers in diamonds. However, depending on the type of point defect in SiC, they can have different spin-multiplicity in the ground and excited state, namely, triplet (S=1) or quadruplet (S=3/2). Accordingly, several quantum sensing techniques can be developed and integrated in classical electronics and photonics, e.g., all-optical magnetometry and thermometry, which do not even require radio-frequency, as well as single-photon emitters. We demonstrate how these defects can be created and engineered in a controlled way, either by high energy or focused ion irradiation, but also how they can be optically initialized and readout with pulsed ODMR technique in a broad range of temperatures, including room temperature. Particularly intriguing for the future is to realize room-temperature quantum microwave amplifier with point defects in SiC.
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